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EN27LN51208 - 3.3V NAND Flash Memory

Datasheet Summary

Description

The Eon EN27LN51208 is a 64Mx8bit with spare 2Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V ).
  • Organization x 8: - Memory Cell Array : (64M + 2M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase x 8: - Page Program : (2K + 64) Byte - Block Erase : (128K + 4K) Byte.
  • Page Read Operation - Page Size : (2K + 64) Byte (x 8) - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Page Program Time : 300µs (Typ. ) - Block Erase.

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Datasheet preview – EN27LN51208

Datasheet Details

Part number EN27LN51208
Manufacturer EON
File Size 2.08 MB
Description 3.3V NAND Flash Memory
Datasheet download datasheet EN27LN51208 Datasheet
Additional preview pages of the EN27LN51208 datasheet.

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Full PDF Text Transcription

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EN27LN51208 EN27LN51208 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory 1. Features • Voltage Supply: 3.3V (2.7V ~ 3.6V ) • Organization x 8: - Memory Cell Array : (64M + 2M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase x 8: - Page Program : (2K + 64) Byte - Block Erase : (128K + 4K) Byte • Page Read Operation - Page Size : (2K + 64) Byte (x 8) - Random Read : 25µs (Max.) - Serial Access : 25ns (Min.) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 300µs (Typ.) - Block Erase Time : 3ms (Typ.
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