EN27LN51208
EN27LN51208 is 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
Features
- Voltage Supply: 3.3V (2.7V ~ 3.6V )
- Organization x 8:
- Memory Cell Array : (64M + 2M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase x 8:
- Page Program : (2K + 64) Byte
- Block Erase : (128K + 4K) Byte
- Page Read Operation
- Page Size : (2K + 64) Byte (x 8)
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Page Program Time : 300µs (Typ.)
- Block Erase Time : 3ms (Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- ECC Requirement: x 8
- 4bit/512 Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
- mand Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High Performance Program
- Cache Read Operation
- Copy-Back Operation
- EOD mode
- OTP Operation
- Bad-Block-Protect
- mercial temperature Range
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., .eonssi.
Rev. A, Issue Date: 2013/09/30
2. General...
