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EN29F080 Datasheet 8 Megabit (1024k X 8-bit) Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: EN29F080 .. EN29F080 8 Megabit (1024K x 8-bit) Flash Memory.

General Description

The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each.

Any byte can be programmed typically in 10µs.

Key Features

  • 5.0V ± 10%, single power supply operation - Minimizes system level power requirements.
  • Manufactured on 0.35 µm process technology.
  • High performance - Access times as fast as 45 ns.
  • Low power consumption 25 mA typical active read current 30 mA typical program/erase current 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: 16 uniform sectors of 64Kbytes each Supports full chip erase Individual sector era.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
EN29F040A 4 Megabit (512K x 8-bit) Flash Memory
EN29GL064AB 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory
EN29GL064AT 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory
EN29LV160C 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
EN29LV320B 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV320C 32 Megabit Flash Memory Boot Sector Flash Memory
EN29LV400A 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
EN29LV640A 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
EN29LV640B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
EN29LV640U (EN29LV640U / EN29LV641x) Flash Memory

EN29F080 Distributor