EN35QX512A
EN35QX512A is 512-Megabit 3V Serial Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
FEATURES
- Single power supply operation
- Full voltage range: 2.7-3.6 volt
- Serial Interface Architecture
- SPI patible: Mode 0 and Mode 3
- 512 M-bit Serial Flash
- 512 M-bit / 65,536 KByte / 262,144 pages
- 256 bytes per programmable page
- Standard, Dual or Quad SPI
- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
- High performance
- 2.7-3.6V
- 104 MHz clock rate for Single/Dual/Quad I/O Fast Read
- 3-3.6V
- 133 MHz clock for Quad I/O Fast Read
- Low power consumption
- 14 m A typical active current
- 2 A typical power down current
- Uniform Sector Architecture
- 16,384 sectors of 4-Kbyte
- 2,048 blocks of 32-Kbyte
- 1,024 blocks of 64-Kbyte
- Any sector or block can be erased individually
- Software and Hardware Write Protection
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
- High performance program/erase speed
- Page program time: 0.5 ms typical
- Sector erase time: 40 ms typical
- Half Block erase time 200 ms typical
- Block erase time 300 ms typical
- Chip erase time: 120 seconds typical
- 3byte address and 4byte address switch
- Volatile Status Register Bits
- Lockable 3x512 byte OTP security sector
- Support Serial Flash Discoverable Parameters (SFDP) signature
- Read Unique ID Number
- Minimum 100K endurance...