• Part: EN39LV010
  • Description: CMOS 3.0 Volt-only Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 403.23 KB
Download EN39LV010 Datasheet PDF
Elite Semiconductor Microelectronics Technology
EN39LV010
EN39LV010 is CMOS 3.0 Volt-only Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
FEATURES - Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors. - High performance - Full voltage range: access times as fast as 70 ns - Regulated voltage range: access times as fast as 45ns - Low power consumption (typical values at 5 MHz) - 7 m A typical active read current - 15 m A typical program/erase current - 1 μA typical standby current (standard access time to active mode) - Flexible Sector Architecture: - Thirty-two 4 Kbyte sectors - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors - High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 90ms typical - JEDEC Standard program and...