EPC EPC1015
Enhancement Mode Power Transistor
| Part No. | EPC1015 |
|---|---|
| Datasheet | EPC1015 Download |
| Manufacturer |  EPC |
| Description | Enhancement Mode Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
VDS Drain-to-Source Voltage 40 ID Continuous (TA = 25˚C, θJA = 23) Pulsed (25˚C, Tpulse = 300 µs) 33 150 VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 -40 to 150 V A V ˚C PARAMETER Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(TH) RDS(ON) Gate Threshold Voltage Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 500 µA VDS = 32 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 9 mA VGS = 5 V, ID = 33 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to Drain Charge QGS Gate to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 20 V, VGS = 0 V VDS = 20 V, ID = 33 A Source-Drain Characteristics (TJ= 25˚C unless ot...
