EPC2010C Description
eGaN® FET DATASHEET EPC2010C EPC2010C Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where...