EPC2010C
Description
eGaN® FET DATASHEET EPC2010C EPC2010C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron...
- Part: EPC2010C
- Description: Power Transistor
- Category: Transistor
- Manufacturer: EPC
- Size: 1.11 MB