Datasheet Summary
eGaN® FET DATASHEET
- Enhancement Mode Power Transistor
VDS , 200 V RDS(on) , 25 mΩ ID , 22 A
EFFICIENT POWER CONVERSION
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
Continuous (TA = 25°C, RθJA = 5.3) Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source...