EPC EPC2055
Power Transistor
| Part No. | EPC2055 |
|---|---|
| Datasheet | EPC2055 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 40 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 48 V Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) 29 A 161 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1 RθJB Thermal Resistance, Junction-to-Board 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 64 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2055 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 2.5 mm x 1.5 mmAPPLICATIONS
● DC-DC Converters● Isolated DC-DC Converters
● Sync rectification
● High frequency (2 MHz) Ultra-thin Point of Load Converters with Input 12 V – 24 V
● Lidar
● USB-C Battery Chargers
● LED Lighting
●...
