EPC EPC2069
Power Transistor
| Part No. | EPC2069 |
|---|---|
| Datasheet | EPC2069 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 40 VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 48 Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 80 A 422 6 V -4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.35 RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 46 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2069 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 3.25 x 3.25 mmAPPLICATIONS
● High frequency DC-DC Converters● BLDC Motor Drives
● Sync Rectification for AC-DC and DC-DC Benefits
● High Power Density
● High Efficiency
● No Reverse Recovery
● Ultra Low QG
● Small Footprint
●...
