EPC EPC8009
Power Transistor
| Part No. | EPC8009 |
|---|---|
| Datasheet | EPC8009 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 65 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C) 78 V ID Continuous (TA = 25°C, RθJA = 33°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 4 A 7.5 6 V –4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 8.2 RθJB Thermal Resistance, Junction-to-Board 16 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 82 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details EPC8009 eGaN FETs are supplied only in passivated die form with solder bars Die Size: 2.1 mm x 0.85 mmAPPLICATIONS
● Ultra High Speed DC-DC Conversion● RF Envelope Tracking
● Wireless Power Transfer
● Game Console and Industrial Movement Sensing (Lidar) Benefits
● Ultra High Efficiency
● Ultra Low RDS(...
