EPC EPC8010
Power Transistor
| Part No. | EPC8010 |
|---|---|
| Datasheet | EPC8010 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 27°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 100 V 4 A 7.5 6 V –4 –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 8.2 RθJB Thermal Resistance, Junction-to-Board 16 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 82 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS IGSS Drain-to-Source Voltage Drain-Source Leakage Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage VGS(TH) Gate Threshold Voltage RDS(on) Drain-Source On Resistance VSD Source-Drain Forward Voltage Specifications are with substrate connected to source where applicable.
