EPC8010 Description
eGaN® FET DATASHEET EPC8010 Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 160 mΩ ID , 4 A D G S EPC8010 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where...