EMD2A611 Description
The EMD2A611 is an optically coupled gate that bines a light emitting diode and an integrated high gain photo detector. The output of the detector IC is an open collector Schottky clamped transistor. The internal shield provides a guaranteed mon mode transient immunity specification of 10,000 V/μs for the EMD2A611.
EMD2A611 Key Features
- 10 kV/μs minimum mon Mode Rejection (CMR) at VCM = 1000V
- High speed: 10M bit/s typical
- VCC range: 4.5~5.5V
- LSTTL/TTL patible
- Inverter logic type
- Low input current capability: 5 mA
- Guaranteed ac and dc performance