Datasheet4U Logo Datasheet4U.com

F25L04PA-50PAG2D - 3V Only 4 Mbit Serial Flash Memory

This page provides the datasheet information for the F25L04PA-50PAG2D, a member of the F25L04PA-50PG2D 3V Only 4 Mbit Serial Flash Memory family.

Datasheet Summary

Features

  • S.
  • Single supply voltage 2.3~3.6V.
  • Standard, Dual SPI.
  • Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz (100MHz / 172MHz equivalent Dual SPI).
  • Low power consumption - Active current: 20 mA - Standby current: 25 μ A - Deep Power Down current: 10 μ A.
  • Reliability - 100,000 typical program/erase cycles - 20 years Data Retention.
  • Program - Page programming time: 0.7 ms (typical) F25L04PA (2D.

📥 Download Datasheet

Datasheet preview – F25L04PA-50PAG2D

Datasheet Details

Part number F25L04PA-50PAG2D
Manufacturer ESMT
File Size 332.95 KB
Description 3V Only 4 Mbit Serial Flash Memory
Datasheet download datasheet F25L04PA-50PAG2D Datasheet
Additional preview pages of the F25L04PA-50PAG2D datasheet.

📁 Similar Datasheet

  • F25L004A - 4Mbit (512Kx8) 3V Only Serial Flash Memory (Elite Semiconductor)
  • F25L008A - 8Mbit (1Mx8) 3V Only Serial Flash Memory (Elite Semiconductor)
  • F25L016A - 3V Only Serial Flash Memory (Elite Semiconductor)
  • F25L01PA - 3V Only 1 Mbit Serial Flash Memory (Elite Semiconductor)
  • F25L08QA - 8 Mbit Serial Flash Memory (Elite Semiconductor)
  • F25L16PA - 16 Mbit Serial Flash Memory (Elite Semiconductor)
  • F25L64QA - 64 Mbit Serial Flash Memory (Elite Semiconductor)
  • F25D08QA - 8 Mbit Serial Flash Memory (Elite Semiconductor)
  • F25D64QA - 64 Mbit Serial Flash Memory (Elite Semiconductor)
  • F25F60CPM - Power MOSFET (SHINDENGEN)
Other Datasheets by ESMT

Full PDF Text Transcription

Click to expand full text
ESMT Flash  FEATURES  Single supply voltage 2.3~3.6V  Standard, Dual SPI  Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz (100MHz / 172MHz equivalent Dual SPI)  Low power consumption - Active current: 20 mA - Standby current: 25 μ A - Deep Power Down current: 10 μ A  Reliability - 100,000 typical program/erase cycles - 20 years Data Retention  Program - Page programming time: 0.7 ms (typical) F25L04PA (2D) 3V Only 4 Mbit Serial Flash Memory with Dual Output  Erase - Chip erase time 1 sec (typical) - Block erase time 0.
Published: |