• Part: F50D1G41LB-66YG2ME
  • Description: 1.8V 1-Gbit SPI-NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.71 MB
F50D1G41LB-66YG2ME Datasheet (PDF) Download
Elite Semiconductor Microelectronics Technology
F50D1G41LB-66YG2ME

Description

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. The device is a 1Gb SLC SPI-NAND Flash memory device based on the standard parallel NAND Flash, but new mand protocols and registers are defined for SPI operation.

Key Features

  • Voltage Supply: 1.8V (1.7V~1.95V)
  • Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K +
  • Automatic Program and Erase
  • Page Program: (2K +
  • Block Erase: (128K + 4K) Byte
  • Page Read Operation
  • Page Size: (2K +
  • Read from Cell to Register with Internal ECC: 100us