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F50D2G41LB-50YG2M - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

Key Features

  • Voltage Supply: 1.8V (1.7V~1.95V).
  • Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
  • Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
  • Memory Cell: 1bit/Memory Cell.
  • Support SPI-Mode 0 and SPI-Mode 31.
  • Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
  • Hard.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F50D2G41LB-66YG2M 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
F50D2G41XA 1.8V 2-Gbit SPI-NAND Flash Memory
F50D1G41LB 1.8V 1-Gbit SPI-NAND Flash Memory
F50D1G41LB-50YG2M 1.8V 1 Gbit SPI-NAND Flash Memory
F50D1G41LB-50YG2ME 1.8V 1 Gbit SPI-NAND Flash Memory

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ESMT Flash (Preliminary) F50D2G41LB (2M) 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. Values 1.8V x1, x21, x4 50/66MHz 1-bit 20/15ns 1ms (maximum value) 1ms (maximum value) FEATURES  Voltage Supply: 1.8V (1.7V~1.