Part F50D2G41LB-66YG2M
Description 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 1.25 MB
F50D2G41LB-66YG2M Datasheet (PDF) Download
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Elite Semiconductor Microelectronics Technology

F50D2G41LB-66YG2M Overview

Key Features

  • Voltage Supply: 1.8V (1.7V~1.95V)
  • Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K +
  • Automatic Program and Erase
F50D2G41LB-66YG2M datasheet preview

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