F50D2G41LB-66YG2M Description
ESMT Flash (Preliminary) F50D2G41LB (2M) 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: x2 PROGRAM operation is not defined.
F50D2G41LB-66YG2M Key Features
- Voltage Supply: 1.8V (1.7V~1.95V)
- Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Page Read Operation
- Page Size: (2K + 64) Byte
- Read from Cell to Register with Internal ECC: 100us