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F50L1G41LB-104YG2M

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

F50L1G41LB-104YG2M datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

F50L1G41LB-104YG2M datasheet preview

F50L1G41LB-104YG2M Datasheet Details

Part number F50L1G41LB-104YG2M
Datasheet F50L1G41LB-104YG2M F50L1G41LB Datasheet (PDF)
File Size 1.47 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 3.3V 1 Gbit SPI-NAND Flash Memory
F50L1G41LB-104YG2M page 2 F50L1G41LB-104YG2M page 3

F50L1G41LB-104YG2M Overview

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. The device is a 1Gb SLC SPI-NAND Flash memory device based on the standard parallel NAND Flash, but new mand protocols and registers are defined for SPI operation. It is also an alternative to SPI-NOR,...

F50L1G41LB-104YG2M Key Features

  • Voltage Supply: 3.3V (2.7V~3.6V)
  • Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program: (2K + 64) Byte
  • Block Erase: (128K + 4K) Byte
  • Page Read Operation
  • Page Size: (2K + 64) Byte
  • Read from Cell to Register with Internal ECC: 100us
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