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F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Download the F59D1G161LB-45TG2M datasheet PDF. This datasheet also covers the F59D1G81LB-45TG2M variant, as both devices belong to the same 1 gbit (128m x 8/ 64m x 16) 1.8v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max. ) - Serial Access: 45ns (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F59D1G81LB-45TG2M-ESMT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Elite Semiconductor

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB 1.8V NAND Flash Memory
F59D1G161MB-45BG2M 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) x16 -Page Size: (1K + 32) Word (x16)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time x8 - Program time: 300us (Typ.) - Block Erase time: 4ms (Typ.)  Command/Address/Data Multiplexed I/O Port F59D1G81LB / F59D1G161LB (2M) 1 Gbit (128M x 8/ 64M x 16) 1.