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F59D1G81MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Key Features

  • z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word z Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max. ) - Serial A.

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📁 Similar Datasheet

Part Number Description Manufacturer
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Elite Semiconductor

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D1G81MA-45BCG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MB 1.8V NAND Flash Memory
F59D1G81MB-45BCG2M 1.8V NAND Flash Memory
F59D1G81MB-45BG2M 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word z Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.) z Command/Address/Data Multiplexed I/O Port F59D1G81MA / F59D1G161MA (2L) 1 Gbit (128M x 8/ 64M x 16) 1.