F59D1G81MB-45BCG2M Description
The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
F59D1G81MB-45BCG2M Key Features
- Voltage Supply: 1.8V (1.7 V ~ 1.95V)
- Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit x16
- Memory Cell Array: (64M + 2M) x 16bit
- Data Register: (1K + 32) x 16bit
- Automatic Program and Erase x8
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte x16
- Page Program: (1K + 32) Word