Part F59D4G81CA-45BG2L
Description 4 Gbit (512M x 8) 1.8V NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 2.42 MB
Elite Semiconductor Microelectronics Technology

F59D4G81CA-45BG2L Overview

Key Features

  • Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
  • Number of valid blocks – Min 2008 blocks – Max 2048 blocks F59D4G81CA (2L) 4 Gbit (512M x
  • 1.8V NAND Flash Memory
  • Power supply VCC = 1.7V to 1.95V
  • Access time – Cell array to register 30 μs max – Serial Read Cycle 30ns min (CL= 30pF)