• Part: F59D4G81CA-45BG2L
  • Description: 4 Gbit (512M x 8) 1.8V NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 2.42 MB
Download F59D4G81CA-45BG2L Datasheet PDF
Elite Semiconductor Microelectronics Technology
F59D4G81CA-45BG2L
F59D4G81CA-45BG2L is 4 Gbit (512M x 8) 1.8V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
ESMT Flash Features - Organization - Memory cell array 4352 × 128K × 8 - Register 4352 × 8 - Page size 4352 bytes - Block size (256K + 16K) bytes - Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Mode control - Serial input/output - mand control - Number of valid blocks - Min 2008 blocks - Max 2048 blocks F59D4G81CA (2L) 4 Gbit (512M x 8) 1.8V NAND Flash Memory - Power supply VCC = 1.7V to 1.95V - Access time - Cell array to register 30 μs max - Serial Read Cycle 30ns min (CL= 30pF) - Program/Erase time - Auto Page Program 300 μs/page typ. - Auto Block Erase 3.5 ms/block typ. -...