Part F59L1G81LB-25BG2M
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 2.25 MB
Elite Semiconductor Microelectronics Technology

F59L1G81LB-25BG2M Overview

Description

The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply.

Key Features

  • Voltage Supply: 3.3V (2.7V~3.6V)
  • Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K +
  • Automatic Program and Erase
  • Page Program: (2K +
  • Block Erase: (128K + 4K) Byte
  • Page Read Operation
  • Page Size: (2K +
  • Random Read: 25us (Max.)