F59L1G81LB-25BG2M Description
The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
F59L1G81LB-25BG2M Key Features
- Voltage Supply: 3.3V (2.7V~3.6V)
- Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)