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M12L2561616A-6BG2T Datasheet 4m X 16 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read single write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K cycle).
  • All Pb-free products are RoHS-Compli.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L2561616A-6BG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6BG2S Synchronous DRAM
M12L2561616A-6TG2S Synchronous DRAM
M12L2561616A-6TG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6TG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-5BG2S Synchronous DRAM
M12L2561616A-5BG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-5BG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-5TG2S Synchronous DRAM
M12L2561616A-5TG2T 4M x 16 Bit x 4 Banks Synchronous DRAM

M12L2561616A-6BG2T Distributor