Datasheet4U Logo Datasheet4U.com

M12L2561616A-6TG2T - 4M x 16 Bit x 4 Banks Synchronous DRAM

Download the M12L2561616A-6TG2T datasheet PDF. This datasheet also covers the M12L2561616A variant, as both devices belong to the same 4m x 16 bit x 4 banks synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read single write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K cycle).
  • All Pb-free products are RoHS-Compli.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M12L2561616A_EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M12 12-KEYS PIANO 8/12 DEMO TUNES IC MOSDESIGN
M120 NON VOLATILE RANDOM ACCESS MEMORY SGS
M120-2 NON VOLATILE RANDOM ACCESS MEMORY SGS
M1200 Mercury TM1200 PCB-Mount Analog Encoders GSI Group
M1200A ON/OFF ONE SHOT LED FLASH IC MOSDESIGN

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L2561616A-6TG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6TG2S Synchronous DRAM
M12L2561616A-6BG2S Synchronous DRAM
M12L2561616A-6BG2T 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6BG2T 4M x 16 Bit x 4 Banks Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT SDRAM FEATURES  JEDEC standard 3.3V power supply  LVTTL compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  All inputs are sampled at the positive going edge of the system clock  Burst Read single write operation  DQM for masking  Auto & self refresh  64ms refresh period (8K cycle)  All Pb-free products are RoHS-Compliant M12L2561616A (2T) 4M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L2561616A-5TG2T M12L2561616A-6TG2T M12L2561616A-7TG2T M12L2561616A-5BG2T M12L2561616A-6BG2T M12L2561616A-7BG2T Max Package Comments Freq.