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M12L32162A-7TG Datasheet 1m X 16bit X 2banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Preliminary Revision History Revision 0.1 (Aug. 11 2006) - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics .. M12L32162A Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2007 Revision : 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The M12L32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576

Key Features

  • z JEDEC standard 3.3V power supply z LVTTL compatible with multiplexed address z Dual banks operation z MRS cycle with address key programs - CAS Latency (2 & 3 ) www. DataSheet4U-. comBurst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) z All inputs are sampled at the positive going edge of the system clock z Burst Read Single-bit Write operation z DQM for masking z Auto & self refresh z 64ms refresh period (4K cycle).

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L32162A-7BG 1M x 16Bit x 2Banks Synchronous DRAM
M12L32321A-5BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-6BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-7BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVAG2N Synchronous DRAM
M12L128168A-5BVAG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVG2N Synchronous DRAM

M12L32162A-7TG Distributor