M12L64322A-7TG2S Datasheet 512k X 32 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	M12L64322A-7TG2S
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	815.28 KB
Description	512K x 32 Bit x 4 Banks Synchronous DRAM
Datasheet	M12L64322A-7TG2S M12L64322A Datasheet (PDF)

The M12L64322A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits.

Synchronous design allows precise cycle control with the

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) M12L64322A (2S) 512K x 32 Bit x 4 Banks Synchronous DRAM.

Part Number	Description
M12L64322A-7BG2S	512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-5BG2S	512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-5TG2S	512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6BG2S	512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG2S	512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2Y	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2M	1M x 16 Bit x 4 Banks Synchronous DRAM