Part M13S2561616A-5TG2T
Description 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
Manufacturer Elite Semiconductor Microelectronics Technology
Size 1.21 MB
Elite Semiconductor Microelectronics Technology
M13S2561616A-5TG2T

Overview

  • Double-data-rate architecture, two data transfers per clock cycle
  • Bi-directional data strobe (DQS)
  • Differential clock inputs (CLK and CLK )
  • DLL aligns DQ and DQS transition with CLK transition
  • Four bank operation
  • CAS Latency : 2, 2.5, 3
  • Burst Type : Sequential and Interleave
  • Burst Length : 2, 4, 8
  • All inputs except data & DM are sampled at the rising edge of the system clock (CLK)
  • Data I/O transitions on both edges of data strobe (DQS)