• Part: M13S2561616A-6BIG2T
  • Description: 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.62 MB
Download M13S2561616A-6BIG2T Datasheet PDF
Elite Semiconductor Microelectronics Technology
M13S2561616A-6BIG2T
M13S2561616A-6BIG2T is 4M x 16 Bit x 4 Banks Double Data Rate SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M13S2561616A-4TIG2T comparator family.
ESMT M13S2561616A (2T) Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features - Double-data-rate architecture, two data transfers per clock cycle - Bi-directional data strobe (DQS) - Differential clock inputs (CLK and CLK ) - DLL aligns DQ and DQS transition with CLK transition - Four bank operation - CAS Latency : 2, 2.5, 3 - Burst Type : Sequential and Interleave - Burst Length : 2, 4, 8 - All inputs except data & DM are sampled at the rising edge of the system clock (CLK) - Data I/O transitions on both edges of data strobe (DQS) - DQS is edge-aligned with data for READs; center-aligned with data for WRITEs - Data mask (DM) for...