M13S64164A-6TG2Y
M13S64164A-6TG2Y is 1M x 16 Bit x 4 Banks Double Data Rate SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M13S64164A comparator family.
- Part of the M13S64164A comparator family.
ESMT
M13S64164A (2Y)
DDR SDRAM
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Four bank operation z CAS Latency : 2, 2.5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock (CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for READs; center-aligned with data for WRITEs z Data mask (DM) for write masking only z VDD = 2.5V ± 0.2V, VDDQ =...
