Datasheet4U Logo Datasheet4U.com

M52D2561616A-5BG2F - 4M x 16 Bit x 4 Banks Mobile SDRAM

Download the M52D2561616A-5BG2F datasheet PDF. This datasheet also covers the M52D2561616A variant, as both devices belong to the same 4m x 16 bit x 4 banks mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M52D2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • 1.8V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address.
  • All inputs are sampled at the positive going edge of the system clock.
  • Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength).
  • DQM for maski.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M52D2561616A-ESMT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M52 TRIPLE-BALANCED MIXER Tyco Electronics
M52001SP SYNC SIGNAL PROCESSOR Mitsubishi
M52003AFP PAL VIDEO CHROMA INTERFACE Mitsubishi
M52005P COMB FILTER Y/C PROCESSOR/CORING Mitsubishi
M52014SP TWIN PLL VIF / SIF Mitsubishi Electric

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M52D2561616A-6BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D2561616A-7BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D2561616A 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D256328A 2M x 32 Bit x 4 Banks Mobile SDRAM
M52D256328A-6BG2F 2M x 32 Bit x 4 Banks Mobile SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Mobile SDRAM FEATURES  1.8V power supply  LVCMOS compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  EMRS cycle with address  All inputs are sampled at the positive going edge of the system clock  Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength)  DQM for masking  Auto & self refresh  64ms refresh period (8K cycle) M52D2561616A (2F) 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq.