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M52D256328A-6BG2F - 2M x 32 Bit x 4 Banks Mobile SDRAM

Download the M52D256328A-6BG2F datasheet PDF. This datasheet also covers the M52D256328A variant, as both devices belong to the same 2m x 32 bit x 4 banks mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M52D256328A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits.

Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • 1.8V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address.
  • All inputs are sampled at the positive going edge of the system clock.
  • Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength).
  • DQM for maski.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M52D256328A-ESMT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M52D256328A-7BG2F 2M x 32 Bit x 4 Banks Mobile SDRAM
M52D256328A 2M x 32 Bit x 4 Banks Mobile SDRAM
M52D2561616A 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D2561616A-5BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D2561616A-6BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Mobile SDRAM FEATURES  1.8V power supply  LVCMOS compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  EMRS cycle with address  All inputs are sampled at the positive going edge of the system clock  Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength)  DQM for masking  Auto & self refresh  64ms refresh period (4K cycle) M52D256328A (2F) 2M x 32 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq.