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M52S32321A Datasheet 512k X 32bit X 2banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Revision History : Revision 1.0 (Oct. 31, 2006) - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Revision 1.2 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns) Revision 1.4 (Jul. 10,2007) - Modify type error M52S32321A Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.

Key Features

  • z 2.5V power supply z LVCMOS compatible with multiplexed address z Dual banks operation z MRS cycle with address key programs - CAS Latency (1, 2 & 3 ) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) z EMRS cycle with address key programs. z All inputs are sampled at the positive going edge of the system clock z Burst Read Single-bit Write operation z Special Function Support. - PASR (Partial Array Self Refresh ) - TCSR (Temperature compensated Self Refr.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M52D2561616A 4M x 16 Bit x 4 Banks Mobile SDRAM
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M52D2561616A-7BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D256328A 2M x 32 Bit x 4 Banks Mobile SDRAM
M52D256328A-6BG2F 2M x 32 Bit x 4 Banks Mobile SDRAM
M52D256328A-7BG2F 2M x 32 Bit x 4 Banks Mobile SDRAM
M52D5121632A 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-5BG 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-6BG 8M x 16 Bit x 4 Banks Mobile SDRAM

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