Part M53D2561616A-7.5BG2F
Description 4M x16 Bit x 4 Banks Mobile DDR SDRAM
Manufacturer Elite Semiconductor Microelectronics Technology
Size 708.08 KB
Elite Semiconductor Microelectronics Technology

M53D2561616A-7.5BG2F Overview

Key Features

  • JEDEC Standard
  • Internal pipelined double-data-rate architecture, two data access per clock cycle
  • Bi-directional data strobe (DQS)
  • No DLL; CLK to DQS is not synchronized
  • Differential clock inputs (CLK and CLK )
  • Four bank operation
  • CAS Latency : 3
  • Burst Type : Sequential and Interleave
  • Special function support
  • PASR (Partial Array Self Refresh)