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M53D256328A-6BIG2F

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M53D256328A-6BIG2F datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M53D256328A-6BIG2F datasheet preview

M53D256328A-6BIG2F Datasheet Details

Part number M53D256328A-6BIG2F
Datasheet M53D256328A-6BIG2F M53D256328A Datasheet (PDF)
File Size 2.26 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 2M x 32 Bit x 4 Banks LPDDR SDRAM
M53D256328A-6BIG2F page 2 M53D256328A-6BIG2F page 3

M53D256328A-6BIG2F Overview

Ball Name Function A0~A11, BA0~BA1 Address inputs - Row address A0~A11 - Column address A0~A8 A10/AP : Bank selects (4 Banks) DQ0~DQ31 Data-in/Data-out RAS CAS WE VSS VDD DQS0~DQS3 Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe. DQS0 corresponds to the data on DQ0~DQ7;.

M53D256328A-6BIG2F Key Features

  • JEDEC Standard
  • Internal pipelined double-data-rate architecture, two data
  • Bi-directional data strobe (DQS)
  • No DLL; CLK to DQS is not synchronized
  • Differential clock inputs (CLK and CLK )
  • Four bank operation
  • CAS Latency : 3
  • Burst Type : Sequential and Interleave
  • Burst Length : 2, 4, 8, 16
  • Special function support
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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