• Part: M53D5121632A-7.5BG
  • Description: 8M x16 Bit x 4 Banks Mobile DDR SDRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.66 MB
Download M53D5121632A-7.5BG Datasheet PDF
Elite Semiconductor Microelectronics Technology
M53D5121632A-7.5BG
M53D5121632A-7.5BG is 8M x16 Bit x 4 Banks Mobile DDR SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M53D5121632A comparator family.
ESMT Mobile DDR SDRAM Features - JEDEC Standard - Internal pipelined double-data-rate architecture, two data access per clock cycle - Bi-directional data strobe (DQS) - No DLL; CLK to DQS is not synchronized. - Differential clock inputs (CLK and CLK ) - Four bank operation - CAS Latency : 2, 3 - Burst Type : Sequential and Interleave - Burst Length : 2, 4, 8, 16 - Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature pensated Self Refresh) - DS (Drive Strength) - Deep Power Down (DPD) Mode M53D5121632A 8M x16 Bit x 4 Banks Mobile DDR SDRAM - All inputs except data & DM are sampled at the rising edge of the system clock(CLK) - DQS is edge-aligned with...