E50N06 - Power MOSFET

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

ESTEK

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Datasheet Details

Part number	E50N06
Manufacturer	ESTEK
File Size	179.84 KB
Description	Power MOSFET
Datasheet	E50N06 Datasheet

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E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 60V ID25 = 50A RDS(ON) = 0.022 Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Published: Sep 28, 2016 |