ET-20N50
Overview
This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
- RDS(on) (Max 0.26 Ω )@VGS=10V
- Gate Charge (Typical 90nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol
- Gate{ {
- Drain
- Source
