Datasheet4U Logo Datasheet4U.com

ET-20N50 - N-Channel MOSFET

General Description

This Power MOSFET is manufactured advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.26 Ω )@VGS=10V.
  • Gate Charge (Typical 90nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain.
  • ◀▲.
  • { 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number ET-20N50
Manufacturer ESTEK
File Size 277.42 KB
Description N-Channel MOSFET
Datasheet download datasheet ET-20N50 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ET-1102 900 MHz Digital Spread Spectrum Cordless Telephone RadioShack
ET-34063A DC to DC Converter Controller ETC
ET-3528 1W White LED Edison
ET-3528A-111W PLCC LED Edison
ET-3528B-111W PLCC LED Edison

Other Datasheets by ESTEK

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source General Description This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.