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6
IGBT
V
6th Gen. IGBT Module V-series
A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics · Improved noise-loss trade-off · Reduced turn-on dv/dt, excellent turn-on dic/dt Turn-off switching characteristic · Soft switching behavior, turn-off oscillation free
125
600V-100A (chip level)
V-IGBT Von=1.90V
25°C 25°C
100
Collector Current [A]
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125°C 75 125°C
U-IGBT Von=2.00V
50
25
0 0.0 0.5 1.0 1.5 2.0 2.