Datasheet Summary
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MJE13003
Features
Power dissipation PCM : 1.25
NPN SILICON TRANSISTOR
TO 126
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1.BASE 2.COLLECTOR 3.EMITTER
Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
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Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE
1 unless otherwise specified
Test Ic= 1000 Ic= 10 IE= 1000 VCB= 700 VCE= 400 VEB= 9 conditions A mA A V V V IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 8 5 1 1.2 3 5 0.5 2.5 V V V MHz µs µs MIN 700 400 9 1000 500 1000...
