Datasheet4U Logo Datasheet4U.com

13003BR - MJE13003BR

Key Features

  • Power dissipation PCM : 1.25 NPN.

📥 Download Datasheet

Datasheet Details

Part number 13003BR
Manufacturer Unknown Manufacturer
File Size 54.28 KB
Description MJE13003BR
Datasheet download datasheet 13003BR Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
13003BDG NPN SILICON TRANSISTOR Unisonic Technologies
13003BS NPN SILICON TRANSISTOR Unisonic Technologies
13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics
13003 NPN Epitaxial Silicon Transistor Elite Enterprises
13003 HIGH VOLTAGE AND HIGH SPEED SWITCH HSiN

Other Datasheets by Unknown Manufacturer

Part Number Description
13001S Low-frequency amplification environment rated bipolar transistors
13005A NPN SILICON TRANSISTOR
1302 200 V - 1/000 V Single Phase Bridge
1302F 200 V - 1/000 V Single Phase Bridge
1302UF 200 V - 1/000 V Single Phase Bridge

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE 1 unless otherwise specified Test Ic= 1000 Ic= 10 IE= 1000 VCB= 700 VCE= 400 VEB= 9 conditions A mA A V V V IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 8 5 1 1.2 3 5 0.5 2.5 V V V MHz µs µs MIN 700 400 9 1000 500 1000 40 TYP MAX UNIT V V V µA µA µA VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 0.