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1N5447A - SILICON EPICAP DIODES

This page provides the datasheet information for the 1N5447A, a member of the 1N5441A SILICON EPICAP DIODES family.

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Datasheet Details

Part number 1N5447A
Manufacturer ETC
File Size 211.33 KB
Description SILICON EPICAP DIODES
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lNS441A,B,C (SILICON) thru INS456A,B,C VVC -+II- SILICON EPICAP DIODES . epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic·generation applications in AM through UHF ranges, providing solid·state reliability to replace mechanical tuning methods. • Excellent a Factor at High Frequencies • Guaranteed Capacitance Change - 2.0 to 30 V • Guaranteed Temperature Coefficient • Capacitance Tolerance - 10%,5.0%, and 2.0% • Complete Typical Design Cu rYes VOLTAGE-VARIABLE CAPACITANCE DIODES 6.8 -100 pF 30 VOLTS **MAXIMUM RATINGS Rating Symbol Reverse Voltage Oevice Dissipation @ TA =. 2SoC Derate above 2SoC VR Po Operating Junction Temperature Range Storage Temperature Range TJ Tstg Value 30 400 2.
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