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IN 5461A,B,C (SILICON)
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IN 5476A,B,C
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SILICON EPICAP DIODES
... a PREMIUM line of epitaxial, passivated, abrupt·junction tuning diodes for critical and sophisticated frequency control applications through the UHF range.
• High Q at High Frequencies • Guaranteed High Capacitance Tuning Range • Excellent Unit·to·Unit Uniformity • Guaranteed Temperature Coefficient • Capacitance Tolerances - 10%, 5.0%, and 2.0% • Complete Typical Design Curves
VOLTAGE-VARIABLE CAPACITANCE DIODES
6.8 -100 pF 30 VOLTS
**MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Device Dissipation iii' TA =25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
VR
Po
TJ Tstg
Value
30 400 2.67
+175 -65 to +200
Unit
Volts mW mWfDC °c °c
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1N5461A Datasheet
