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1N5758,A thru 1N5762,A (SILICON)
SILICON 3-LAYER BILATERAL TRIGGERS
... Annular, two terminal devices that exhibit bi-directional negative resistance switching characteristics. These economical, durable devices have been developed for use in thyristor triggering circuits for lamp drivers and universal motor speed controls.
• Switching Voltage Range - 20 to 36 Volts Nominal • Symmetrical Characteristics • Passivated Surface for Reliability and Uniformity
SILICON BILATERAL TRIGGERS
*MAXIMUM RATINGS ITA· 250 C unless otherWise noted I
Rating
Peak Pulse Current (30 f,J.S duration, 120 Hz repetition rate)
Power Dissipation @ T A = -40 to +2SoC Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol Ipul se
Po
TJ
T stg
Value
2.0
300 4.
1N5758 Datasheet
