Unknown Manufacturer 2302
N-Channel MOSFET
FEATURES
TrenchFET Power MOSFET MARKING:A2SHBMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±10 V ID Drain current -2.9 A PD Power Dissipation 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Trans conductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Diode Forward Current Symbol V(BR)DSS Vth(GS) IGSS IDSS rDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Is Test conditions VGS=0V,ID=250uA VDS= VGS, ID=250 uA...