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28C011T - 1-Megabit EEPROM

General Description

Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit

Key Features

  • 128k x 8-bit EEPROM.
  • RAD-PAK® radiation hardened against natural space radiation.
  • Total dose hardness: - > 100 krad (Si), depending upon space mission.
  • Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode.
  • Package: - 32-pin RAD-PAK® flat pack package - JEDEC-approved byte-wide pinout.
  • High speed: - 120, 150, and 200 ns maximum access times available.
  • High endurance: - 10,000 cycles/byte, 10-.

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Datasheet Details

Part number 28C011T
Manufacturer Unknown Manufacturer
File Size 242.70 KB
Description 1-Megabit EEPROM
Datasheet download datasheet 28C011T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1 Megabit (128K x 8-Bit) EEPROM VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy 28C011T A7 A16 X Decoder Memory Array Data Latch Memory Logic Diagram FEATURES: • 128k x 8-bit EEPROM • RAD-PAK® radiation hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode • Package: - 32-pin RAD-PAK® flat pack package - JEDEC-approved byte-wide pinout • High speed: - 120, 150, and 200 ns maximum access times available • High endurance: - 10,000 cycles/byte, 10-year data retention • Page write mode: - 1 to 128 byte page • Low power