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M28F410 M28F420
4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
DUAL x8 and x16 ORGANIZATION
SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44
MEMORY ERASE in BLOCKS
– One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection
– Two 8K Byte or 4K Word Key Parameter Blocks
– One 96K Byte or 48K Word Main Block
– Three 128K Byte or 64K Word Main Blocks 5V ± 10% SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES
PROGRAM/ERASE CONTROLLER
AUTOMATIC STATIC MODE
LOW POWER CONSUMPTION – 60μA Typical in Standby – 0.2μA Typical in Deep Power Down – 20/25mA Typical Operating Consumption
(Byte/Word) HIGH SPEED ACCESS TIME: 70ns
EXTENDED TEMPERATURE RANGES
PRELIMINARY DATA
TSOP56 (N) 14 x 20mm
44
1
SO44 (M)
Figure 1.
28F410-100M1 Datasheet
