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28F410-100M1 - M28F410

Datasheet Summary

Description

The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word.

The interface is directly compatible with most microprocessors.

SO44 and TSOP56 packages are used.

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Datasheet preview – 28F410-100M1

Datasheet Details

Part number 28F410-100M1
Manufacturer ETC
File Size 240.55 KB
Description M28F410
Datasheet download datasheet 28F410-100M1 Datasheet
Additional preview pages of the 28F410-100M1 datasheet.

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Other Datasheets by ETC

    Full PDF Text Transcription

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    M28F410 M28F420 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter Blocks – One 96K Byte or 48K Word Main Block – Three 128K Byte or 64K Word Main Blocks 5V ± 10% SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES PROGRAM/ERASE CONTROLLER AUTOMATIC STATIC MODE LOW POWER CONSUMPTION – 60μA Typical in Standby – 0.2μA Typical in Deep Power Down – 20/25mA Typical Operating Consumption (Byte/Word) HIGH SPEED ACCESS TIME: 70ns EXTENDED TEMPERATURE RANGES PRELIMINARY DATA TSOP56 (N) 14 x 20mm 44 1 SO44 (M) Figure 1.
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