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2CN3 - GLASS PASSIVATED SILICON DAMPING DIODE

Datasheet Summary

Features

  • 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weight. 4. Small high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840611.

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Datasheet Details

Part number 2CN3
Manufacturer ETC
File Size 36.37 KB
Description GLASS PASSIVATED SILICON DAMPING DIODE
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BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weight. 4. Small high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Use for Store temperature Quality Class Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Voltage Average Forward Voltage Non-repeat Forward Surge Current Peak Reverse Current Peak Reverse Current Junction Temperature Reverse Recovery Time Symbols Unit T °C VRRM IF(AV) VFM VF IFSM IRM1 IRM2 Tjm trr V A V V A uA uA °C uS (Ta = 25°C ) Specifications Test Condition Rectifier, damping circuit. -55~+150 GS 50~1400 1.0 A~G: 1.8 H~J: 2.5 I=AIF(AV),A=3.
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