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2N3955 Datasheet PDF

Unknown Manufacturer 2N3955

N-Channel Dual Silicon Junction Field-Effect Transistor

Part No. 2N3955
Datasheet 2N3955 Download
Manufacturer Unknown Manufacturer
Description N-Channel Dual Silicon Junction Field-Effect Transistor
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2N3955 datasheet page 1 preview

ELECTRICAL CHARACTERISTICS

Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic

ELECTRICAL CHARACTERISTICS

Common Source Forward Transconductance Common Source Output Capacitance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio g fs gos Ciss Cdgo Crss NF | IG1 – IG2 | V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 2N3954 Min – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 0.5 –4 – 4.5 2 5 Max 2N3955 Min – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 0.5 –4 – 4.5 2 5 Max 2N3956 Min – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 0.5 –4 – 4.5 2 5 Max Unit V pA nA pA nA V V V V mA Process NJ16 Test Conditions IG = – 1µA, VDS = ØV VGS = – 30V, VDS = ØV...