Datasheet Summary
2N5058S (SILICON)
NPN SILICON ANNULAR TRANSISTORS
- .. designed for high- voltage amplifier and driver applications.
- High Collector- Emitter Breakdown Voltage BVCEO = 300 Vdc (Min)
- 2N5058S
- DC Current Gain Specified 5.0 mAdc to 100 mAdc
- Coliector- Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc
NPNSILICON AMPLIFIER/DRIVER
TRANSISTORS
- MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
Collector Current
- Continuous Total Power Dissipation @ TA = 2SoC
Derate above 2SoC Total Power Dissipation @ TC = 2SoC
Derate above 2SoC
Operating and Storage Junction Temperature Range
Symbol 2N5058S 2N5059S
VCEO
Vce...
