2N5058S - NPN SILICON ANNULAR TRANSISTORS

Datasheet Details

Part number	2N5058S
Manufacturer	Unknown Manufacturer
File Size	107.34 KB
Description	NPN SILICON ANNULAR TRANSISTORS
Datasheet	2N5058S Datasheet

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2N5058S (SILICON) NPN SILICON ANNULAR TRANSISTORS · .. designed for high·voltage amplifier and driver applications. • High Collector· Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S • DC Current Gain Specified 5.0 mAdc to 100 mAdc • Coliector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc NPNSILICON AMPLIFIER/DRIVER TRANSISTORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 2SoC Derate above 2SoC Total Power Dissipation @ TC = 2SoC Derate above 2SoC Operating and Storage Junction Temperature Range Symbol 2N5058S 2N5059S VCEO 300 250 Vce 300 250 VEB 7.0 6.0 IC 150 PD 1.0 6.67 PD 5.0 33.