Datasheet Summary
2N5070 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTORS
... designed primarily for applications.s. high-power linear amplifier from 2.0 to 75 MHz.
- Optimized for Operation from a 28-Volt Supply
- Power Out@ 28 Vdc, 30 MHz
- 25 W (PEP)
- Intermodulation Distortion at 25 W (PEP)
IMD = 30 dB (Max)
- Isothermal-Resistor Design Results in Rugged Device
25 W (PEP)
- 30 MHz
RF POWER TRANSISTOR NPN SILICON
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Peak Base Current
- Continuous Total Device Dissipation@Tc
- 25°C
Derate above 2SoC Operating and Storage Junction
Temperature Range
- 'ndicates JEDEC Registered...
