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2N5070 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTORS
... designed primarily for applications.s. high-power linear amplifier from 2.0 to 75 MHz.
• Optimized for Operation from a 28-Volt Supply • Power Out@ 28 Vdc, 30 MHz - 25 W (PEP) • Intermodulation Distortion at 25 W (PEP)
IMD = 30 dB (Max)
• Isothermal-Resistor Design Results in Rugged Device
25 W (PEP) - 30 MHz
RF POWER TRANSISTOR NPN SILICON
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Peak Base Current - Continuous Total Device Dissipation@Tc - 25°C
Derate above 2SoC Operating and Storage Junction
Temperature Range
·'ndicates JEDEC Registered Data.
Symbol VCEO VCSO VESO
IC
IS
Po
TJ,Tstg
Value 30 65 4.0 3.3 10 1.
2N5070 Datasheet
