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2N5160 (SILICON)
PNP silicon RF power transistors designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as Class A, B, or C output driver, or pre-driver stages in VHF and UHF.
CASE 79 (TO-39)
Collector connected to case
STYLE 1 PIN 1. EMITTER . 2. BASE 3. COLLECTOR
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current Total Device Dissipation @TC = 25° C
Derate above 25° C Operating and Storage Junction
Temperature Range
Symbol Value Unit
VCEO
40
Vdc
VCB VEB
60 Vdc 4.0 Vdc
IC 0.4 Adc
PD 5.0 28.