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2N5208 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
· . . designed for general purpose RF amplifier applications in the frequency range up to 300 MHz.
<• Low Collector-Base Time Constant - rb 'Cc lOps
• Low Noise Figure N.F. = 3.0dB max @ 100 MHz • High Power Gain - Gpe = 22 dB min @100 MHz • CompleteY-Parameter Curves • Low Leakage Current - ICBO< 10 nAdc@VCB= 10 V • Stability Factor Curves - For Direct Circuit DeSign
PNP SILICON SWITCHING AND AMPLIFIER
TRANSISTOR
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA = 25°C Derate above 2SoC
Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO Vca VEa
IC
Po
Po
TJ.
2N5208 Datasheet
