2N5208 Datasheet | Unknown Manufacturer

2N5208 (SILICON) PNP SILICON ANNULAR TRANSISTOR - . . designed for general purpose RF amplifier applications in the frequency range up to 300 MHz. <- Low Collector-Base Time Constant - rb 'Cc lOps - Low Noise Figure N.F. = 3.0dB max @ 100 MHz - High Power Gain - Gpe = 22 dB min @100 MHz - pleteY-Parameter Curves - Low Leakage Current - ICBO< 10 nAdc@VCB= 10 V - Stability Factor Curves - For Direct Circuit DeSign PNP SILICON SWITCHING AND AMPLIFIER TRANSISTOR - MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 2SoC Total Power Dissipation @ TC = 25°C Derate above...